Resolution enhancement techniques in optical lithography free download
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Sign In View Cart Help. Email or Username Forgot your username? Password Forgot your password? Keep me signed in. Please wait No SPIE account? Create an account Institutional Access:. Resolution Enhancement Techniques in Optical Lithography. Author s : Alfred Kwok-Kit Wong. Ever-smaller IC devices are pushing the optical lithography envelope, increasing the importance of resolution enhancement techniques.
This tutorial encompasses two decades of research. It discusses theoretical and practical aspects of commonly used techniques, including optical imaging and resolution, modified illumination, optical proximity correction, alternating and attenuating phase-shifting masks, selecting RETs, and second-generation RETs.
We suggest that a so-called vector model be adopted in immersion lithography because such a system Figure 2 shows the best image fidelity using hybrid SMO at uses polarized light to illuminate the mask. Polarized light en- the best focus position. For image patterns with better fidelity, hances the image contrast and the resolution. Using our rig- Figure 3 a shows the initial and optimized mask and source orous vector imaging model, we developed RETs that can use obtained by vector OPC and hybrid SMO plus a source post- up to 70 parameters for a mask, process, and lithography tool processing method SPM in the case of different patterns, co-optimization MPLCO technique.
We investigated a set of gradient-based, pixelated vector OPC SPM is applied to remove the faint and singular source pixels. A pixelated vector OPC successfully shown in Figure 3 b.
However, the resulting pixelated source enhanced image fidelity, and compensated for the effects of and mask will be expensive to fabricate. In order to reduce the complexity and fabrication cost of pix- We developed three kinds of gradient-based SMO algorithms elated masks and sources, we developed the MPLCO technique and different optimization strategies under the vector imaging using a normalized conjugate gradient algorithm.
The hybrid SMO method outper- within a larger process window by optimizing the mask, process, formed others by achieving better image fidelity, process win- dow, and convergence properties, using just two additional dimensions of source shape and intensity see Figures 2 and 3. A comparison of the pattern fidelity of different source mask optimization SMO strategies at the best focus position, with a binary mask and target image CD of 45nm.
Their influence on lithography performance can be un- lected eight parameters, including those influencing the mask, derstood using vector imaging theory, and careful optimization allows them to compensate for each other. AttPSM: Attenuated phase-shift mask. The target image CD is 45nm. Usually the exposure latitude mask bias and feature transmittance were optimized. The process parameters, the hotplate duration, transition duration, depth of focus, which here is greater than nm, is enlarged sig- chillplate duration, and photoresist development time were op- nificantly by using MPLCO.
This is very important for the chip timized. For the lithography tool parameters, the outer partial process as well as wafer flatness and stage tolerance. The initial and optimal parameters robustness of lithography systems, as well as for optimization of are listed in Table 1. The initial parameters came from previous the parametric mask and source.
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