Solid state storage devices pdf

Ganger, and D. Nagle, MEMS-based integrated-circuit mass-storage systems. Communications capacities. Chen, E. Lee, G. Gibson, R. Katz and D. By the time larger SCM modules become available, we [E07] E-week, Intel previews potential replacement for flash memory, www.

Schwarz and D. Self- arrays with the same space overhead. In Proc. On the possibility of small, service-free disk based storage systems, In Proc. Patterson, G. Gibson and R. A case for redundant arrays of inexpensive disks RAID. Pavan, R. Bez, P. Olivo, E. Flash memory few gigabytes of data at locations where repairs are cells-an overview, Proceedings of the IEEE, 85 8 either impossible satellites or uneconomical remote , Aug Pinheiro, W. Weber and L.

Barroso, Failure locations. Finally, the higher bandwidth-to-capacity [SG07] B. Schroeder and G. More work is still needed to estimate how the higher [SG99] M. Schulze, G. Katz, R. How reliable is a RAID? Schwarz and W. Described in this patent application are devices for energy storage and methods of making and using such devices. In various embodiments, blocking layers are provided between dielectric material and the electrodes of an energy storage device.

The block layers are characterized by higher dielectric constant than the dielectric material. There are other embodiments as well.

In general, a capacitive energy storage device comprises two electrodes with a dielectric material disposed between the electrodes. As shown in FIG. Upon application of a voltage across the electrodes the dielectric material becomes polarized and charges are stored on the electrode plates.

Unfortunately, conventional energy storage devices are inadequate, as explained below. It is desirable to have new and improved energy storage devices. In an embodiment, the present invention provides an energy storage device that includes first and second electrodes that are spaced apart.

A dielectric layer is disposed between the first and second electrodes. A first blocking layer is disposed between the first electrode and the dielectric layer and a second blocking layer is disposed between the second electrode and the dielectric layer. The dielectric constants of the first and second blocking layers are both independently greater than the dielectric constant of the dielectric layer. Depending on the application, the dielectric material may different relative permittivity, which can be between about 2 and 25, between about 3 and 15, or other range.

The dielectric layer can have a material characterized by a band gap of greater than 4 eV. The dielectric layer can also have a material characterized by a breakdown field strength of greater than 0. The dielectric layer may comprise a material selected from oxides, nitrides, oxynitrides and fluorides.

The blocking layers, with higher relative dielectric constant, can have a relative permittivity of greater than Depending on the application, the first and second blocking layers may independently comprise a material selected from ionically conducting materials and non-ionically conducting materials.

The non-ionically conducting materials can be multiferroic high k materials, such as CaCu 3 Ti 4 O 12 , La 2 nanocomposite high-k materials, high-k ceramic materials, ferroelectric perovskites materials, PZT Pb Zr 0. The first and second blocking layers independently comprises a material having a dielectric constant between 10 and times the dielectric constant of the material comprising the dielectric layer.

In a specific embodiment, the first and second blocking layers independently comprise a material having a dielectric constant between 50 and times the dielectric constant of the material comprising the dielectric layer. The first and second blocking layers independently may have a thickness of between 4 nm and nm. In a specific embodiment, the dielectric layer has a thickness of between 10 nm and 10 um. The first and second blocking layers independently may have a thickness of between 10 and times the thickness of the dielectric layer.

It is to be appreciated that the block layer and dielectric layer material vary depending on the application. In an embodiment, the first and second blocking layers are both PZT and the dielectric layer is SiO 2. The blocking layers can also have different material. In an embodiment, the first blocking layer comprises a cation conducting material and the second blocking layer comprises an anion conducting material. In another embodiment, the first blocking layer comprise an anion conducting material and a cation conducting material.

In yet another embodiment, the second blocking layer comprise an anion conducting material and a cation conducting material. The first electrode can have a work function greater than the work function of the second electrode. The work function of the first electrode can be greater than 4. It is to be appreciated that embodiments of the present invention provides various advantages over conventional techniques. In this patent application, energy storage devices are capable of sustaining higher field strengths than conventional capacitive energy storage devices and which may therefore be used for high energy density capacitive energy storage.

More specifically, energy storage devices according to the present invention are capable of withholding higher breakdown voltages and therefore improved stability and reliability compared to conventional devices, a thereby allowing a higher level of energy density. There are other benefits as well as described below. Capacitive energy storage has well-known advantages versus electrochemical energy storage, e.

Compared to batteries, capacitors are able to store energy with very high power density, i. However, capacitors often do not store energy in as little volume or weight as in a battery, or at low cost per energy stored, making capacitors impractical for applications such as in electric vehicles. Generally the voltage across the electrodes, V, will be some function of the charge stored on the electrodes, Q, as shown in the solid line curve in FIG.

There will be some maximum voltage, V max , up to which the device can be charged before the dielectric material starts to breakdown. Capacitive energy storage has been limited by the relatively low field strengths sustainable in conventional high permittivity dielectric materials as shown in FIG. The dotted line on FIG. In this patent application are described energy storage devices capable of sustaining higher field strengths than conventional capacitive energy storage devices and which may therefore be used for high energy density capacitive energy storage.

For this we have included Pdf notes of each Chapter still updating…. A solid-state drive or SSD is a storage device that uses integrated circuit assemblies as memory or interconnected flash memories to store data persistently even without power.

Unlike a hard disk drive or HDD that uses rotating metal platters or disks with magnetic coating to store data, an SSD has no mechanical or movable parts. Chemistry Notes for class 12 Chapter 1 The Solid State Solids Solids are the chemical substances which are characterised by define shape and volume, rigidity, high density, low compressibility. The constituent particles atoms, molecules or ions are closely packed. The absence of mechanical parts makes fragmentation of data in Solid-State Drive SSD Storage Devices negligible not like in hard drive disks making the entire process.

This level of efficiency results into faster boot time enhanced bandwidth used in enterprise computing and faster files transfer from one device to another. Analysts argue that Solid-State Drive SSD Storage Devices are 25 to times quicker and efficient as compared to other storage drives like hard disk drives ii. Low power consumption: It should be noted that other storage drives like the hard disk drive contain and rely on some moving mechanical components like magnet-coated metal platter used in reading and writing data.