Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular b…

“Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy”,

K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano, Y. Shiraki

Journal of Crystal Growth 362, 276-281(2013).　 DOI: 10.1016/j.jcrysgro.2011.12.084(外部サイト)