Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a …
2013.02.26 12:11
“Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)”
K. Hamaya, Y. Ando, K. Masaki, Y. Maeda, Y. Fujita, S. Yamada, K. Sawano and M. Miyao
J. Appl. Phys. 113, 17C501 (2013).