Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomical…
2013.01.07 12:14
”Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact”
Y. Fujita, S. Yamada, Y. Ando, K. Sawano, H. Itoh, M. Miyao, and K. Hamaya
J. Appl. Phys. 113, 013916 (2013). DOI: 10.1063/1.4773072(外部サイト)