Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n+-G…
2014.04.30 12:22
“Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n+-Ge Schottky-tunnel contacts”
Kohei Hamaya, Gotaro Takemoto, Yuzo Baba, Kenji Kasahara, Shinya Yamada, Kentarou Sawano, Masanobu Miyao
Thin Solid Films 557 (2014) 382–385 DOI: https://doi.org/10.1016/j.tsf.2013.08.120(外部サイト)