Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy

“Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy”

Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki

Thin Solid Films 557, 66-69 (2014) DOI: https://doi.org/10.1016/j.tsf.2013.10.082(外部サイト)