Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates

“Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates”

K. Sawano, Y. Hoshi, S. Kubo, S. Yamada, K. Nakagawa, Y. Shiraki

Journal of Crystal Growth 401, 758–761 (2014). DOI: https://doi.org/10.1016/j.jcrysgro.2014.02.014(外部サイト)