Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

“Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer”

K. Sawano, Y. Hoshi, S. Endo, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, S. Yamada, K. Hamaya, M. Miyao and Y. Shiraki

Thin Solid Films 557, 76–79 (2014) DOI: https://doi.org/10.1016/j.tsf.2013.10.074(外部サイト)