A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial …
2016.04.28 12:31
“A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes”
Yuichi Fujita, Michihiro Yamada, Yuta Nagatomi, Keisuke Yamamoto, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Hiroshi Nakashima, and Kohei Hamaya
Japanese Journal of Applied Physics 55, 063001-1~4 (2016). DOI:10.7567/JJAP.55.063001(外部サイト)