Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous …

“Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion” Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Takeshi Kanashima, Kentarou Sawano, Kohei Hamaya

Materials Science in Semiconductor Processing 70, 83–85 (2017) DOI: https://doi.org//10.1016/j.mssp.2016.07.025(外部サイト)