Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with se…
2017.04.03 12:42
“Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ ion implantation using oil-immersion Raman spectroscopy”
Shotaro Yamamoto, Daisuke Kosemura, Kazuma Takeuchi, Seiya Ishihara, Kentarou Sawano, Hiroshi Nohira and Atsushi Ogura
Japanese Journal of Applied Physics 56, 051301 (2017) DOI: https://doi.org//10.7567/JJAP.56.051301(外部サイト)