Study n ion implantation conditions in fabricating compressively strained Si/relaxed Si1−xCx heteros

“Study n ion implantation conditions in fabricating compressively strained Si/relaxed Si1−xCx heterostructures using the defect control by ion implantation technique”

You Arisawa, Kentarou Sawano, Noritaka Usami

Journal of Crystal Growth 468, 601-604 (2017). DOI: https://doi.org/10.1016/j.jcrysgro.2016.12.065(外部サイト)