Growth and characterization of low composition Ge, x in epi-Si1-xGex (x ≤ 10 %) active layer for fa…

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Growth and characterization of low composition Ge, x in epi-Si1-xGex (x ≤ 10 %) active layer for fabrication of hydrogenated bottom solar cell.

M. Ajmal Khan, R. Sato, K. Sawano, P. Sichanugrist, A. Lukyanov and Y. Ishikawa

Journal of Physics D: Applied Physics 51, 185107 (11 pp) (2018). DOI: /10.1088/1361-6463/aab80d(外部リンク)