Formation of uniaxial strained Ge via control of dislocation alignment in Si/Ge heterostructures

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“Formation of uniaxial strained Ge via control of dislocation alignment in Si/Ge heterostructures”

Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano

AIP Advances 8, 075112 (9 pages) (2018). DOI: /10.1063/1.5011397