Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)

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“Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)”

Md. Mahfuz Alam, Yusuke Hoshi and Kentarou Sawano

Semiconductor Science and Technology 33, 124008 (6pp) (2018) DOI:/10.1088/1361-6641/aae575