Effects of post annealing on in-situ n-doped Ge-on-Si
2018.02.25 07:26
“Effects of post annealing on in-situ n-doped Ge-on-Si”
Yuta Kumazawa, Xuejun Xu, Takuya Maruizumi, Kentarou Sawano
Semiconductor Science and Technology 33, 124006 (7pp) (2018) DOI:/10.1088/1361-6641/aae62e