Stability of strain in Si layers formed on SiGe/Si(110) heterostructures
2018.11.25 07:26
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“Stability of strain in Si layers formed on SiGe/Si(110) heterostructures”
Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Takane Yamada, Kei Sato, Naoto Utsuyama, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O Hara, Kentarou Sawano and Kiyokazu Nakagawa
Semiconductor Science and Technology 33, 124016 (8pp) (2018) DOI:/10.1088/1361-6641/aaeb10