Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge

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“Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge”

Eriko Shigesawa, Ryotaro Matsuoka, Masashi Fukumoto, Ryosuke Sano, Kohei M Itoh, Hiroshi Nohira and Kentarou Sawano

Semiconductor Science and Technology 33, 124020 (4pp) (2018) DOI:/10.1088/1361-6641/aaec51